سمپوزیوم منطقه ای نوآوری در علم و فناوری

English

صفحه اصلی / دومین سمپوزیوم منطقه ای نوآوری در علم و فناوری

مقیاس پذیری و عملکرد فت نانوصفحه دو سیم باگیت همه جانبه در الکترونیک نسل بعدی

نویسندگان :

Reza Abbasnezhad¹ Hassan Rasooli² Rezs Hosseini³ Aliasghar Sedghi⁴ Ali Vahedi⁵

1- دانشگاه آزاد اسلامی واحد شبستر 2- دانشگاه آزاد اسلامی واحد تبریز 3- دانشگاه آزاد اسلامی واحد خوی 4- دانشگاه آزاد اسلامی واحد تبریز 5- دانشگاه آزاد اسلامی واحد تبریز

کلمات کلیدی :

Conventional GAA FET،Naonosheet،Dual wire،Density Gradient (DG)

چکیده :

In this paper, we propose a new variation of the Gate All Around Nanosheet Field Effect Transistor (GAA NS FET), incorporating Dual Wire (DW) strained channels. We examine its electrical performance at a temperature of 300K and compare it with the Conventional DW GAA NS FET and the Conventional GAA FET. Our study investigates the impact of electrostatic control on DC and analog parameters, such as gate capacitance and transconductance, for all three device types. The channel regions of the proposed structures are composed of Silicon Germanium (Si/Ge/Si), and the combination of strain and the heterojunction design leads to significant enhancements in device performance. To accurately model the semiconductor device, we solve the Density Gradient (DG) equation self-consistently, applying the Shockley-Read-Hall (SRH) equation to estimate carrier generation, while also considering the effects of bandgap narrowing on transport behavior and accounting for Auger recombination. Notably, at 300K, the Conventional DW GAA NS FET demonstrates a substantial improvement in both Ion and Ioff compared to the Conventional GAA FET.